2SK3000 features low on-resistance r ds(on) = 0. 25 w typ. (v gs = 10 v, i d = 450 ma) 4v gate drive devices. small package (mpak) expansive drain to source surge power capability outline 1 2 3 1. source 2. gate 3. drain mpak 2 3 1 d s g smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
absolute maximum ratings (ta = 25 c) item symbol ratings unit drain to source voltage v dss 40 v gate to source voltage v gss 10 v drain current i d 1.0 a drain peak current i d(pulse) note1 4.0 a reverse drain current i dr 1.0 a channel dissipation pch note2 400 mw channel temperature tch 150 c storage temperature tstg ?5 to +150 c note: 1. pw 10 m s, duty cycle 1 % 2. when using the glass epoxy board (10 mm x 10 mm x 1 mm t ) electrical characteristics (ta = 25 c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss 40 60 v i d = 100 m a, v gs = 0 drain to source voltage v ds(sus) 40 v l = 100 m h, i d = 3 a gate to source breakdown voltage v (br)gss 10v i g = 100 m a, v ds = 0 zero gate voltege drain current i dss 1.0 m av ds = 40 v, v gs = 0 gate to source leak current i gss 5 m av gs = 6.5v, v ds = 0 gate to source cutoff voltage v gs(off) 1.1 2.1 v i d = 10 m a, v ds = 5v static drain to source on state resistance r ds(on) 0.3 0.5 w i d = 450 ma v gs = 4v note3 static drain to source on state resistance r ds(on) 0.25 0.3 w i d = 450 ma v gs = 10v note3 forward transfer admittance |y fs | 0.5 1.2 s i d = 450 ma v ds = 10v note3 input capacitance ciss 14.0 pf v ds = 10v output capacitance coss 68 pf v gs = 0 reverse transfer capacitance crss 3.0 pf f = 1mhz turn-on delay time t d(on) 0.12 m sv gs = 4v, i d = 450 ma rise time t r 0.6 m sr l = 22 w turn-off delay time t d(off) 1.7 m s fall time t f 1.4 m s note: 3. pulse test 4. marking is ?y? 2SK3000 smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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